L-Band

MACOM’s GaN-on-SiC products are suited for pulsed and CW L-band applications. With a variety of power levels, high gain/stage and high power-added efficiency, MACOM’s products support continuous improvements in SWAP-C benchmarks. Thereby supporting the next generation of radar and avionics systems.

68 Items

Clear Filters

Min Frequency (MHz)

Peak Output Power (W)

Gain (dB)

Efficiency (%)

Operating Voltage (V)

Form

Package Category


GTVB222611FAV1A	High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz		2170	260	17	72	48		Earless
CG2H30070	70 W; 0.5 - 3.0 GHz; GaN HEMT	500	3000	80	15	55	28	Packaged Discrete Transistor	Flange
CG2H40010	10 W RF Power GaN HEMT	0	6000	10		65	28	Packaged Discrete Transistor	Flange, Pill
CG2H40025	25 W RF Power GaN HEMT	0	6000	25		62	28	Packaged Discrete Transistor	Flange, Pill
CG2H40035	35 W RF Power GaN HEMT	0	6000	35	14	64	28	Packaged Discrete Transistor	Flange, Pill
CG2H40045	45 W RF Power GaN HEMT	0	4000	45		55	28	Packaged Discrete Transistor	Flange, Pill
CG2H80015D-GP4	15 W; 8.0 GHz ; GaN HEMT Die	0	8000	15		70	28	Discrete Bare Die	Die
CG2H80030D-GP4	30 W; 8.0 GHz; GaN HEMT Die	0	8000	30	17	65	28	Discrete Bare Die	Die
CG2H80045D-GP4	45 W, 8.0 GHz, GaN HEMT Die	0	8000	45	15	65	28	Discrete Bare Die	Die
CG2H80060D-GP4	60 W; 8.0 GHz; GaN HEMT Die	0	8000	60		70	28	Discrete Bare Die	Die
CG2H80120D-GP4	120 W; DC - 8000 MHz; 28 V; GaN HEMT Die	0	8000	120	12	65	28	Discrete Bare Die	Die
CGH21240	240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX	1800	2300	240	15	33	28	Packaged Discrete Transistor	Flange
CGH27015	15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz	0	6000	15	15	28	28	Packaged Discrete Transistor	Flange, Pill
CGH27015P	15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz	0	6000	15	15	28	28	Packaged Discrete Transistor	Pill
CGH27030	30 W, DC - 6.0 GHz, 28 V, GaN HEMT	0	6000	30	18	33	28	Packaged Discrete Transistor	Flange, Pill, Surface Mount
CGH27060F	8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz	0	4000	60	14	27	28	Packaged Discrete Transistor	Flange
CGH40006	6 W RF Power GaN HEMT	0	6000	6	11	65	28	Packaged Discrete Transistor	Pill, Surface Mount
CGH40010	10 W RF Power GaN HEMT	0	6000	10	14	65	28	Packaged Discrete Transistor	Flange, Pill
CGH40025	25 W RF Power GaN HEMT	0	6000	25	13	62	28	Packaged Discrete Transistor	Flange, Pill
CGH40035	35 W RF Power GaN HEMT	0	6000	35	13	60	28	Packaged Discrete Transistor	Flange
CGH40045	45 W RF Power GaN HEMT	0	4000	45	12	55	28	Packaged Discrete Transistor	Flange, Pill
CGH40090	90 W RF Power GaN HEMT	0	4000	90	14	55	28	Packaged Discrete Transistor	Push-Pull
CGH40120	120 W RF Power GaN HEMT	0	3000	120	15	70	28	Packaged Discrete Transistor	Flange, Pill
CGH40180	180 W RF Power GaN HEMT	0	3000	180	15	70	28	Packaged Discrete Transistor	Push-Pull
CGH55030	30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX	0	6000	30	10	25	28	Packaged Discrete Transistor	Flange, Pill
CGH60008D-GP4	8 W; 6.0 GHz; GaN HEMT Die	0	6000	8	12	65	28	Discrete Bare Die	Die
CGH60015D-GP4	15 W; 6.0 GHz; GaN HEMT Die	0	6000	15	12	65	28	Discrete Bare Die	Die
CGH60030D-GP4	30 W; 6.0 GHz; GaN HEMT Die	0	6000	30	12	65	28	Discrete Bare Die	Die
CGH60060D-GP4	60 W; 6.0 GHz; GaN HEMT Die	0	6000	60	12	65	28	Discrete Bare Die	Die
CGH60120D-GP4	120 W; 6.0 GHz; GaN HEMT Die	0	6000	120	12	65	28	Discrete Bare Die	Die
CGHV14250	250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems	0	1600	250	18	77	50	Packaged Discrete Transistor	Flange, Pill
CGHV14500	500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems	1200	1400	500	16	68	50	Packaged Discrete Transistor	Flange, Pill
CGHV14800	800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems	1200	1400	800	16	65	50	Packaged Discrete Transistor	Flange
CGHV1F006	6 W; DC - 15.0 GHz; 40 V; GaN HEMT	0	15000	6	7	52	40	Packaged Discrete Transistor	Surface Mount
CGHV1F025	25 W; DC - 15 GHz; 40 V; GaN HEMT	0	15000	25	11	51	40	Packaged Discrete Transistor	Surface Mount
CGHV1J006D-GP4	6 W; 18.0 GHz; GaN HEMT Die	0	18000	6	17	60	40	Discrete Bare Die	Die
CGHV1J025D-GP4	25 W; 18.0 GHz; GaN HEMT Die	0	18000	25	17	60	40	Discrete Bare Die	Die
CGHV1J070D-GP4	70 W; 18.0 GHz; GaN HEMT Die	0	18000	70	17	60	40	Discrete Bare Die	Die
CGHV27015S	15 W; DC - 6.0 GHz; 50 V; GaN HEMT	0	6000	15	21	32	50	Packaged Discrete Transistor	Surface Mount
CGHV27030	30 W; DC - 6.0 GHz; GaN HEMT	0	6000	30	21	32	50	Packaged Discrete Transistor	Surface Mount
CGHV27060	60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications	0	2700	60	17	64	50	Packaged Discrete Transistor	Plastic
CGHV40030	30 W; DC - 6 GHz; 50 V; GaN HEMT	0	6000	30	16	70	50	Packaged Discrete Transistor	Flange, Pill
CGHV40050	50 W; DC - 4.0 GHz; 50 V; GaN HEMT	0	4000	50	16	53	50	Packaged Discrete Transistor	Flange, Pill
CGHV40100	100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT	0	3000	100	18	55	50	Packaged Discrete Transistor	Flange, Pill
CGHV40180	180 W; DC - 2 GHz; GaN HEMT	0	2000	200	24	70	50	Packaged Discrete Transistor	Flange, Pill
CGHV40200	200 W RF Power GaN HEMT	0	3000	250	21	75	50	Packaged Discrete Transistor	Push-Pull
CGHV40320D-GP4	320 W; 4.0 GHz; GaN HEMT Die	0	4000	320	19	65	50	Discrete Bare Die	Die
CGHV60040D-GP4	40 W; 6.0 GHz; GaN HEMT Die	0	6000	40		62	50	Discrete Bare Die	Die
CGHV60075D5-GP4	75 W; 6.0 GHz; GaN HEMT Die	0	6000	75	7	65	50	Discrete Bare Die	Die
CGHV60170D-GP4	170 W; 6.0 GHz; 50 V GaN HEMT Die	0	6000	170	17	65	50	Discrete Bare Die	Die
CMPA0060002	2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier	0	6000	2	17	23	28	Packaged MMIC	Flange
CMPA0060025	25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier	0	6000	25	18	33	50	Packaged MMIC	Flange, Die
CMPA0527005	5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers	500	2700	5	20	47	50	Packaged MMIC	Flange
GTVA101K4	High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz	960	1400	1400	17	68	50	Packaged Discrete Transistor	Bolt Down
GTVA10700	High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz	960	1215	700	20	70	50	Packaged Discrete Transistor	Earless, Bolt Down
GTVA12600	High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz	1200	1400	600	20	63	50	Packaged Discrete Transistor	Earless, Bolt Down
PTVA030121EA-V1	High Power RF LDMOS FET 12 W; 50 V; 390 - 450 MHz	390	450	12	25	69	50	Packaged Discrete Transistor	Bolt Down
PTVA035002EV-V1	High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz	390	450	450	18	64	50	Packaged Discrete Transistor	Bolt Down
PTVA04250	High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz	470	806	250	19	26	50	Packaged Discrete Transistor	Earless, Bolt Down
PTVA04350	High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz	0	1350	350	18	30	50	Packaged Discrete Transistor	Earless, Bolt Down
PTVA047002EV-V1	High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz	470	806	700	18	29	50	Packaged Discrete Transistor	Bolt Down
PTVA101K02EV-V1	High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz	1030	1090	900	18	65	50	Packaged Discrete Transistor	Bolt Down
PTVA102001EA-V1	High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz	960	1600	200	19	60	50	Packaged Discrete Transistor	Bolt Down
PTVA104501EH-V1	High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz	960	1215	450	18	58	50	Packaged Discrete Transistor	Bolt Down
PTVA12025	High Power RF LDMOS FET 25 W; 500 - 1400 MHz	500	1400	25	18	54	50	Packaged Discrete Transistor	Bolt Down, Surface Mount
PTVA120501EA-V1	High Power RF LDMOS FET 50 W; 50 V; 1200 – 1400 MHz	1200	1400	50	17	50	50	Packaged Discrete Transistor	Bolt Down, Push-Pull, Surface Mount
PTVA12350	High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz	1200	1400	350	17	55	50	Packaged Discrete Transistor	Earless, Bolt Down
PTVA127002EV-V1	High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz	1200	1400	700	16	56	50	Packaged Discrete Transistor	Bolt Down